The mid-infrared (2–20 𝜇𝑚) is of great interest for spectroscopy and optical communications, thanks to its characteristic molecular absorptions and its two atmospheric transparency windows (3–5 𝜇𝑚 and 8–12 𝜇𝑚). Advances in materials and epitaxial growth are driving the development of mid-IR photonic integrated circuits (PICs), offering the prospect to realize compact, robust, and energy-efficient systems for portable spectroscopy and real-time detection applications. The research on mid-IR PICs focuses on reducing propagation losses of dielectric waveguides. In addition, efforts are devoted to develop high-𝑄 resonators, versatile passive devices useful for filtering, wavelength division multiplexing and Kerr frequency comb generation (as demonstrated in the near infrared region). Furthermore, efficient and ultrafast integrated mid-IR modulators need developments, especially in the long-wave infrared region. They allow for an improved functionality of photonic integrated circuits, enabling electro-optic comb generation, synchronous detection, and high-speed data transmission for optical communications. The choice of a PIC platform depends heavily on the transparency of its constituent materials: III–V semiconductors are particularly attractive due to their low optical losses and their ability to monolithically integrate active and passive components. In this context, we investigated the performance of III–V passive devices, notably low-loss waveguides and high-Q resonators. In addition, we fabricated ultrafast amplitude modulators operating in the 8–12 μm band, which exploit intersubband transitions in asymmetric coupled quantum wells to achieve modulation.
Jury members:
Amphithéâtre
Centre de nanosciences et de nanotechnologies
10 bld Thomas Gobert
91120 Palaiseau