MBE cluster for III-V advanced quantum structures  

Contacts: Antonella CAVANNA and Ulf GENNSER   

A new MBE cluster, currently being installed at C2N.  This will enable us to grow topological heterostructure and spintronic materials, as well as to develop high mobility 2DEGs in the (InAs, GaSb, AlSb) material system.  It will consist of two growth chambers, connected by a UHV tunnel

III-V semiconductors epitaxy (summer/fall 2025)

  • High-purity, 2 inch system
  • Source configuration 2xGa, 2xAl, In, As, Sb, Bi, Si, C.
  • Topological insulators, 2DEGs, optical devices.  

Metal epitaxy: ferromagnetic materials and superconductors (already installed)

  • Superconductors: Al, Nb, …
  • Ferromagnets: Co, Fe, …
  • Barrier materials: MgO
  • Gates: Pt, Ni
  • Equipped with a mask station for localized deposition.
  • Cooling plate for low-T deposition