Directeur de recherche CNRS - Team: 2DEG
Ulf Gennser obtained his Ph. D. from Columbia University (New York) in 1992, studying Si-based molecular beam epitaxy and resonant tunnelling in the Si/SiGe material system. He has continued his research at MIT National Magnet Laboratory (Boston), the High Field Magnet Laboratory (Grenoble), Paul Scherrer Institute (Villigen, Switzerland), before joining the Laboratoire de Photonique et de Nanostructures, CNRS near Paris, in 2000. His work at PSI included research on the metal-insulator transition in two-dimensional systems, and the realisation of light-emitting Si/SiGe based quantum cascade structures. Since joining CNRS his research activities are centred on MBE growth of high-mobility electron gases, mesoscopic physics and vertical transport devices. Ulf Gennser is responsible for the MBE growth of high mobility electronic systems and is Adjoint Director of the Department of Nanoelectronicas at C2N.